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| FQA7N65C 650V N-Channel MOSFET February 2006 QFET FQA7N65C 650V N-Channel MOSFET Features * * * * * * 7A, 650V, RDS(on) = 1.4 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability (R) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-3P G DS FQA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) Parameter FQA7N65C 650 7 4.45 28 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 212 7 17.3 4.5 173 1.38 -55 to +150 300 Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQA7N65C 0.75 62.5 Units C/W C/W (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA7N65C Rev. A FQA7N65C 650V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQA7N65C Device FQA7N65C Package TO-3P TC = 25C unless otherwise noted Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.5 A VDS = 40 V, ID =3.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 650 -----2.0 ------ Typ -0.8 -----1.2 8 955 100 12 Max Units --1 10 100 -100 4.0 1.4 -1245 130 16 V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 325 V, ID = 7A, RG = 25 ---(Note 4, 5) 20 50 90 55 28 4.5 12 ---400 3.3 50 110 190 120 36 --- ---- VDS = 520 V, ID = 7A, VGS = 10 V (Note 4, 5) -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 7 A VGS = 0 V, IS = 7 A, dIF / dt = 100 A/s (Note 4) ------ 7 28 1.4 --- A A V ns C 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQA7N65C Rev. A 2 www.fairchildsemi.com FQA7N65C 650V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom: 5.0 V Top : Figure 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150 C o 10 0 10 0 25 C o -55 C o Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250s Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.0 RDS(ON) [ ], Drain-Source On-Resistance 2.5 VGS = 10V 2.0 IDR, Reverse Drain Current [A] 10 1 10 0 150 1.5 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test VGS = 20V Note : T = 25 J 1.0 0 5 10 15 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 2000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 1600 10 VDS = 130V VDS = 325V Capacitances [pF] Ciss 1200 8 VDS = 520V Coss 800 Note ; 1. VGS = 0 V 2. f = 1 MHz 6 4 400 Crss 2 Note : ID = 7A 0 -1 10 10 0 10 1 0 0 4 8 12 16 20 24 28 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQA7N65C Rev. A 3 www.fairchildsemi.com FQA7N65C 650V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 8 10 2 10 s 10 1 100 s ID, Drain Current [A] 10 0 Operation in This Area is Limited by R DS(on) DC ID, Drain Current [A] 10 3 1ms 10ms 100ms 6 4 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 2 10 -2 10 0 10 1 10 2 VDS, Drain-SourceVoltage[V] 0 25 50 75 100 125 150 TC, Case Temperature [ ] Figure 11. Transient Thermal Response Curve 10 0 D=0.5 Z? JC Thermal Response (t), 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 10 -2 single pulse * Notes : (t) 1. Z? JC = 0.72 ? /W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC (t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] FQA7N65C Rev. A 4 www.fairchildsemi.com FQA7N65C 650V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA7N65C Rev. A 5 www.fairchildsemi.com FQA7N65C 650V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA7N65C Rev. A 6 www.fairchildsemi.com FQA7N65C 650V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters FQA7N65C Rev. A 7 www.fairchildsemi.com FQA7N65C 650V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FQA7N65C Rev. A www.fairchildsemi.com |
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